rev.a aug.2010 c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . WFW9N90 WFW9N90 WFW9N90 WFW9N90 silicon silicon silicon silicon n-channel n-channel n-channel n-channel m m m m osfet osfet osfet osfet features 9a,900 v , r ds(o n) (max1. 35 ? )@ v gs =10v ultra-low g ate c harge ( t y pical 58nc) fast switching capability 100 % av alanche t e sted maximum j unction t e mperatu r e range ( 15 0 ) general description these n-ch a nnel enhancement mode power field e ff ect transistors are produced using w insemi s prop r ietar y , planar stripe, dmos technolog y . this advanced technology has been especially tailored to minimize on-state resistan c e, provide s uperior s w i tching perfo r mance, and w i thstand high ener g y pulse in the avalanche and commutation m ode. these devices are well suited for high e ff i ciency s w i tch mode power supplies. absolute maximum r atings symbol parameter v alue units v dss drain source v o ltage 900 v i d continuous drain cur r ent( @ t c= 2 5 ) 9 a continuous drain cur r ent( @ t c= 10 0 ) 5.7 a i dm drain cur r ent pulsed (note1) 27 a v gs gate to source v o ltage 30 v e as single pulsed a valanche energy (not e 2) 663 mj e ar repetitive a valanche energy (not e 1) 1 5 mj dv/dt peak diode recovery dv /dt (not e 3) 4.5 v/ ns p d t o tal power dissipation(@ t c=25 ) 150 w t j ,t stg junction and storage t e mperatu r e -55~150 t l channel t e mperatu r e 300 thermal c haracteristics symbol parameter v a l ue units min t y p max r qjc ther m al resistance , junction -to -case - - 0.83 /w r qja ther m al resistance , junction-to -ambient - - 50 /w
WFW9N90 WFW9N90 WFW9N90 WFW9N90 2 /7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance electrical characteristics( t c =2 5 ) ch a racteristics symbol t e st co n dition min t y pe max unit gate leakage current i gss v gs = 30 v ,v d s =0v - - 10 na gat e -source breakdown v oltage v (br) g ss i g = 10 a,v ds =0v 30 - - v drain c ut -o f f current i dss v ds = 720 v , v gs =0v - - 100 a drain -source breakdown v oltage v (br)dss i d = 10 m a,v g s =0v 9 00 - - v gate threshold v oltage v gs(th) v ds =10 v , i d = 1 m a 3 - 5 v drain -source on resistance r ds(on) v gs =10 v , i d = 4a - 1 . 1 1. 35 ? forw a rd t r ansconductance gfs v ds = 15 v , i d = 4a 3.0 7 . 0 - s input capacitance c iss v ds =25 v , v gs =0 v , f=1mhz - 2040 - pf reverse transfer c apacitance c rss - 45 - out p ut capacitance c oss - 190 - switching time rise time tr v dd =400 v , i d = 4a r g = 100 ? (note4,5) - 25 - ns t u rn-on t i me t on - 60 - fall time tf - 20 - t u rn-off t i me toff - 95 - t o tal gate c harge ( gate-sou r ce plus gate- d rain) qg v dd =400 v , v gs =10 v , i d = 9a (note 4 ,5) - 58 - nc gat e -source charge qgs - 32 - g ate-drain("miller") charge q gd - 26 - source-drain ratings and characteristics( t a=2 5 ) ch a racteristics symbol t e st condition min t y pe max unit continuous drain reverse current i dr - - - 9 a pul s e drain re v er s e c urrent i drp - - - 27 a forw a rd v oltage(diode) v dsf i dr =9a,v gs =0v - - 1.4 v reverse recovery time t rr i dr =9a,v gs =0 v , di dr / dt =100 a / s - 1 . 6 - ns reverse recovery c harge q r r - 20 - c note 1.repeativity rating :pulse w i dth limited by junction temper a t ure 2.l = 1 5 mh i as = 9a,v dd = 9 0 v , r g =25 ? ,starting t j =25 3. i sd 9a,di/dt 200a/us,v d d < b v ds s ,s t art ing t j =25 4.pulse t e s t:pulse widt h 300us,duty cycl e 2% 5. essentially i ndepende n t of oper a ting tempera t ure. this transistor is an electrostatic sensitive d evice please h andle with caution
WFW9N90 WFW9N90 WFW9N90 WFW9N90 3 /7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.1 fig.1 fig.1 fig.1 on on on on state state state state characteristics characteristics characteristics characteristics fi fi fi fi g g g g .2 .2 .2 .2 t t t t r r r r a a a a n n n n s s s s f f f f e e e e r r r r current current current current ch ch ch ch a a a a ra ra ra ra c c c c t t t t e e e e ri ri ri ri s s s s ti ti ti ti c c c c s s s s fig.3 fig.3 fig.3 fig.3 on-resistance on-resistance on-resistance on-resistance v v v v a a a a riation riation riation riation v v v v s s s s dr dr dr dr a a a a in in in in curr curr curr curr e e e e nt nt nt nt fi fi fi fi g g g g .4 .4 .4 .4 body body body body diode diode diode diode f f f f o o o o r r r r w w w w a a a a rd rd rd rd v v v v o o o o lt lt lt lt a a a a ge ge ge ge v v v v a a a a riation riation riation riation w w w w ith ith ith ith source source source source current current current current and and and and t t t t e e e e mper mper mper mper a a a a ture ture ture ture fig.5 fig.5 fig.5 fig.5 capacitan capacitan capacitan capacitan c c c c e e e e ch ch ch ch a a a a ra ra ra ra c c c c te te te te r r r r istics istics istics istics fig.6 fig.6 fig.6 fig.6 gate gate gate gate ch ch ch ch a a a a rge rge rge rge ch ch ch ch a a a a r r r r a a a a cte cte cte cte r r r r istics istics istics istics
WFW9N90 WFW9N90 WFW9N90 WFW9N90 4 /7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance f f f f i i i i g.7 g.7 g.7 g.7 bre bre bre bre ak ak ak ak do do do do w w w w n n n n v v v v o o o o lt lt lt lt a a a a ge ge ge ge v v v v a a a a ri ri ri ri a a a a ti ti ti ti o o o o n n n n fig.8 fig.8 fig.8 fig.8 on-resi on-resi on-resi on-resi s s s s tance tance tance tance v v v v a a a a riation riation riation riation v v v v s s s s . . . . t t t t emperature emperature emperature emperature fi fi fi fi g g g g .9 .9 .9 .9 m m m m ax ax ax ax imum imum imum imum s s s s a a a a fe fe fe fe op op op op e e e e r r r r a a a a tion tion tion tion a a a a r r r r ea ea ea ea fig.10 fig.10 fig.10 fig.10 maximum maximum maximum maximum dr dr dr dr a a a a in in in in curr curr curr curr e e e e nt nt nt nt v v v v s s s s c c c c a a a a s s s s e e e e t t t t e e e e mp mp mp mp e e e e r r r r atu atu atu atu re re re re fig. fig. fig. fig. 1 1 1 1 1 1 1 1 t t t t ransient ransient ransient ransient th th th th e e e e rmal rmal rmal rmal re re re re s s s s po po po po n n n n se se se se cur cur cur cur v v v v e e e e
WFW9N90 WFW9N90 WFW9N90 WFW9N90 5 /7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.12gate fig.12gate fig.12gate fig.12gate t t t t est est est est circuit circuit circuit circuit & & & & w w w w a a a a v v v v ef ef ef ef orm orm orm orm f f f f i i i i g. g. g. g. 1 1 1 1 3 3 3 3 r r r r es es es es i i i i s s s s ti ti ti ti v v v v e e e e s s s s w w w w i i i i t t t t c c c c h h h h i i i i ng ng ng ng t t t t e e e e s s s s t t t t cir cir cir cir c c c c uit uit uit uit & & & & w w w w a a a a v v v v e e e e form form form form f f f f i i i i g. g. g. g. 14 14 14 14 un un un un c c c c l l l l a a a a mped mped mped mped in in in in d d d d u u u u c c c c ti ti ti ti v v v v e e e e s s s s w w w w i i i i t t t t c c c c hi hi hi hi n n n n g g g g t t t t e e e e s s s s t t t t cir cir cir cir c c c c uit uit uit uit & & & & w w w w a a a a v v v v e e e e form form form form
WFW9N90 WFW9N90 WFW9N90 WFW9N90 6 /7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.15 fig.15 fig.15 fig.15 peak peak peak peak dio dio dio dio d d d d e e e e re re re re c c c c o o o o v v v v er er er er y y y y d d d d v v v v / / / / dt dt dt dt t t t t est est est est circuit circuit circuit circuit & & & & w w w w a a a a v v v v ef ef ef ef orm orm orm orm
WFW9N90 WFW9N90 WFW9N90 WFW9N90 7 /7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance t t t t o o o o - - - - 3pn 3pn 3pn 3pn package package package package d d d d imension imension imension imension unit :m m
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